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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 45 5.0 2.0 UNIT V V A A W V A s
Ths 25 C IC = 8.0 A; IB = 1.6 A f = 64 kHz ICsat = 6.0 A; f = 64 kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
123
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES VCEOsust IEBO REB BVEBO VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C IB = 0 A; IC = 100 mA; L = 25 mH VEB = 6.0 V; IC = 0 A VEB = 6.0 V IB = 600 mA IC = 8.0 A; IB = 1.6 A IC = 8.0 A; IB = 1.6 A IC = 1 A; VCE = 5 V IC = 8 A; VCE = 5 V IF = 8 A
MIN. 800 7.5 5 -
TYP. 110 55 13.5 11 7 1.6
MAX. 1.0 2.0 5.0 1.1 10 2.0
UNIT mA mA V mA V V V V
Collector-emitter sustaining voltage Emitter cut-off current Base-emitter resistance Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (64 kHz line deflection circuit) ts tf Vfr tfr Turn-off storage time Turn-off fall time Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 6.0 A; LC = 170 H; Cfb = 5.4 nF; IB(end) = 0.55 A; LB = 0.6 H; -VBB = 4 V;-IBM = 3.6 A TYP. 145 MAX. UNIT pF
1.7 0.1 16 410
2.0 0.2 -
s s V ns
IF = 8 A; dIF/dt = 50 A/s VF = 5 V
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
TRANSISTOR IC DIODE
ICsat
+ 150 v nominal adjust for ICsat
t
Lc
IB I B end t 5 us 6.5 us 16 us VCE t
D.U.T. IBend LB Cfb
Rbe
-VBB
Fig.1. Switching times waveforms.
Fig.4. Switching times test circuit.
ICsat 90 % IC
VCC
LC
10 % tf ts IB IBend
t
IBend
VCL LB T.U.T.
CFB
-VBB
Rbe
t
- IBM
Fig.2. Switching times definitions.
Fig.5. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; LC = 100 - 200 H; VCL 1500 V; LB = 3 H; CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A
I
F
I
hFE
BU2525DF Tj = 25 C Tj = 125 C
F
100
5V
10% t fr
V F time
10 1V
5V
V F time
V
fr
1 0.1
1
10 IC / A
100
Fig.3. Definition of anti-parallel diode Vfr and tfr
Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
1.2 1.1 1 0.9
VBESAT / V
Tj = 25 C Tj = 125 C
BU2525AF
10
VCESAT / V
BU2525AF
Tj = 25 C Tj = 125 C
8A
0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A 10 IC/IB= 3 4 5
1
6A
5A
IC = 4 A 0.1 0.1 1 IB / A 10
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
BU2527AF
1 0.9 0.8 0.7 0.6 0.5
VCESAT / V IC/IB = 5 4 3
BU2525AF
100
Poff / W
IC = 10 6A 5A
Tj = 25 C
0.4 0.3 0.2 0.1 0 0.1
Tj = 125 C
1 IC / A
10
100
1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
Fig.11. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 64 kHz
BU2527AF
1.2 1.1 1 0.9
VBESAT / V
Tj = 25 C Tj = 125 C
BU2525AF
4 3.5 3 2.5 2
ts, tf / us
IC = 6A 5A
IC= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4
1.5 1 0.5 0 0 0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 IB / A
2
Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 64 kHz
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
with heatsink compound
IC / A 30
BU2527AF
20
10
0
20
40
60
80 Ths / C
100
120
140
0
0
500 VCE / V
1000
1500
Fig.13. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)
Fig.15. Reverse bias safe operating area. Tj Tjmax
10
Zth / (K/W)
BU2525AF
IC / A 100
BU2525AF tp =
1
0.5 0.2 0.1 0.05 0.02
ICM
= 0.01
40 us ICDC
P D tp D= tp T t
0.1
10 100 us
0.01 D=0 0.001 1E-06 1E-04 1E-02 t/s
T
1E+00
Fig.14. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
Ptot 1
1 ms
0.1 10 ms DC
0.01 1 10 100 1000 VCE / V
Fig.16. Forward bias safe operating area. Ths = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound.
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
MECHANICAL DATA
Dimensions in mm Net Mass: 5.88 g
16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 3.3
5.8 max 3.0
25
0.95 max 5.45 5.45 3.3
Fig.17. SOT399; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
7
Rev 1.200

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